silicon rf power semiconductors RD09MUP2 rohs compliance, silicon mosfet power transistor, 520mhz, 8w RD09MUP2 17 aug 2010 1/8 electrostatic sensitive device observe handling precautions index mark [gate] 1.8+/-0.1 0.7+/-0.1 terminal no. (a)drain [output] (b)source [gnd] (c)gate [input] (d)source (b) (b) 0.95+/-0.2 2.6+/-0.2 4.2+/-0.2 5.6+/-0.2 7.0+/-0.2 (c) 0.65+/-0.2 (a) 8.0+/-0.2 6.2+/-0.2 notes: 1. ( ) typical value unit:mm (d) 0.2+/-0.05 top view side view bottom view side view (3.6) (4.5) standoff = max 0.05 detail a detail a description RD09MUP2 is a mos fet type transistor specifically designed for uhf rf power amplifiers applications. features ?high power gain: pout>8w, gp>10db@vdd=7.2v,f=520mhz ?high efficiency: 50%min. (520mhz) ?integrated gate protection diode application for output stage of high power amplifiers in uhf band mobile radio sets. rohs compliant RD09MUP2 is a rohs compliant product. rohs compliance is indicating by the letter ?g? after the lot marking. this product includes the lead in high melting temperature type solders. however, it is applic able to the following exceptions of rohs directions. 1.lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.) absolute maximum ratings (tc=25 c unless otherwise noted) symbol parameter conditions ratings unit vdss drain to source voltage vgs=0v 40 v vgss gate to source voltage vds=0v -5 to +10 v id drain current - 4.0 a pin input power zg=zl=50 ? 1.6 w pch channel dissipation tc=25 c 83 w tj junction temperature - 150 c tstg storage temperature - -40 to +125 c rth j-c thermal resistance junction to case 1.5 c/w schematic drawing note: above parameter s are guaranteed independently. electrical characteristics (tc=25 c , unless otherwise noted) limits unit symbol parameter conditions min typ max. i dss zero gate voltage drain current v ds =17v, v gs =0v - - 10 ua i gss gate to source leak current v gs =10v, v ds =0v - - 1 ua v th gate threshold voltage v ds =12v, i ds =1ma 0.5 - 2.5 v pout output power 8 9 - w d drain efficiency f=520mhz , v dd =7.2v pin=0.8w,idq=1.0a 50 - - % vswrt load vswr tolerance v dd =9.5v,po=8w(pin control) f=520mhz,idq=1.0a,zg=50 ? load vswr=20:1(all phase) no destroy - note: above parameters, ratings, limit s and conditions are subject to change. ( 4 %
silicon rf power semiconductors RD09MUP2 rohs compliance, silicon mosfet power transistor, 520mhz, 8w RD09MUP2 17 aug 2010 2/8 electrostatic sensitive device observe handling precautions typical characteristics vds-ids characteristics 0 1 2 3 4 5 6 7 8 9 0123456789 vds(v) ids(a) ta=+ 25c vg s=4.5v vg s= 4.0v vg s=3.5v vg s=3.0v vgs-ids characteristics 0 2 4 6 8 01234 vgs(v) ids(a),gm(s) ta=+ 25c vds=10v ids gm vds vs. ciss characteristics 0 20 40 60 80 100 120 140 160 0 5 10 15 20 vds(v) ciss(pf) ta= +25c f=1mhz vds vs. crss characteristics 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 vds(v) crss(pf) ta=+ 25c f=1mhz channel dissipat ion v s. am bient t em perat ure 0 10 20 30 40 50 60 0 40 80 120 160 200 ambient temperature ta(deg:c.) channel dissipation pch(w ) ,,, on pcb with termal sheet and heat-sink ( size : 41 x 55mm, t=7.2 mm) *pcb: glass epoxy ( size : 46.4 x 40.0mm, t=0.8 mm) ther mal sheet: geltec cooh- 4000(t=0.5mm) fr ee air vds vs. coss characteristics 0 20 40 60 80 100 120 140 160 0 5 10 15 20 vds(v) coss(pf) ta= +25c f=1mhz
silicon rf power semiconductors RD09MUP2 rohs compliance, silicon mosfet power transistor, 520mhz, 8w RD09MUP2 17 aug 2010 3/8 electrostatic sensitive device observe handling precautions typical characteristics pin-po characteristics @f=520mhz 0 10 20 30 40 0 5 10 15 20 25 30 35 pin(dbm) po(dbm) , gp(db) , idd(a ) 0 20 40 60 80 d(%) ta=+ 25c f= 520mhz vdd=7.2v idq =1.0a po 3 33 gp pin-po characteristics @f=520mhz 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 pin ( w) pout(w) , idd(a) 0 10 20 30 40 50 60 70 80 d(%) po d idd ta= 25c f=520m hz vdd= 7.2v idq = 1.0a vdd-po characteristics @f=520mhz 0 5 10 15 20 4681012 vdd(v) po(w) 0 3 5 8 10 idd(a) po idd ta= 25c f=520m hz pin= 1.0w idq = 1.0a zg =zi=50 ohm
silicon rf power semiconductors RD09MUP2 rohs compliance, silicon mosfet power transistor, 520mhz, 8w RD09MUP2 17 aug 2010 4/8 electrostatic sensitive device observe handling precautions test circuit (f=520mhz) 520mhz micro strip line width=1.3mm/50ohm,er=4.8,t=0.8mm note:board material= glass-epoxy substrate c1,c2:2200pf w:line width=1.0mm 19mm rf-out 22uf,50v c2 4.7k ohm c1 14.5mm 3mm 5mm 19mm vgg vdd 330pf 330pf rf-in 5pf l 47pf 6mm 7mm RD09MUP2 w w 5pf l:43.7nh,6turns,d:0.43mm,2.46mm(outside diameter) 33pf 3.5mm 13mm 5pf 21mm
silicon rf power semiconductors RD09MUP2 rohs compliance, silicon mosfet power transistor, 520mhz, 8w RD09MUP2 17 aug 2010 5/8 electrostatic sensitive device observe handling precautions RD09MUP2 s-parameter data (@vdd=7.2v, id=500ma) freq. [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 100 0.900 -175.7 4.425 75.0 0.016 -7.1 0.798 -173.9 120 0.901 -176.4 3.651 71.1 0.014 -8.2 0.804 -174.4 140 0.905 -176.7 3.056 67.4 0.014 -10.4 0.808 -174.9 160 0.908 -177.2 2.614 64.2 0.013 -10.9 0.812 -175.1 180 0.909 -177.5 2.273 61.4 0.013 -10.0 0.819 -175.2 200 0.912 -177.6 2.003 58.7 0.011 -8.4 0.830 -175.1 220 0.916 -178.0 1.787 55.9 0.011 -6.0 0.842 -175.3 240 0.918 -178.5 1.602 53.3 0.010 -4.1 0.851 -175.3 260 0.922 -178.7 1.442 50.6 0.010 -5.6 0.857 -175.8 280 0.923 -178.9 1.297 48.0 0.009 0.6 0.859 -176.1 300 0.928 -179.0 1.176 45.8 0.008 2.6 0.863 -176.3 320 0.930 -179.1 1.075 44.1 0.008 8.2 0.866 -176.8 340 0.933 -179.3 0.989 42.3 0.008 15.1 0.878 -177.1 360 0.936 -179.6 0.910 40.0 0.008 25.3 0.889 -177.4 380 0.937 179.9 0.841 37.9 0.007 27.2 0.895 -177.8 400 0.939 179.7 0.775 36.3 0.008 35.5 0.897 -178.1 420 0.939 179.3 0.718 34.7 0.008 40.1 0.899 -178.6 440 0.945 179.1 0.667 33.4 0.008 45.0 0.900 -178.8 460 0.947 178.9 0.622 32.1 0.009 51.3 0.906 -179.3 480 0.950 178.8 0.582 30.7 0.009 56.2 0.913 -179.5 500 0.952 178.7 0.548 29.2 0.010 56.9 0.919 179.8 520 0.950 178.3 0.513 28.0 0.011 59.9 0.921 179.6 540 0.952 178.1 0.480 26.8 0.012 64.2 0.924 179.0 560 0.953 177.6 0.455 25.7 0.012 67.0 0.925 178.8 580 0.953 177.2 0.427 24.4 0.012 66.6 0.924 178.6 600 0.956 177.0 0.402 23.7 0.014 68.9 0.928 178.2 620 0.957 177.0 0.383 23.2 0.014 70.7 0.933 177.7 640 0.961 176.9 0.362 22.1 0.015 70.9 0.937 177.3 660 0.957 176.8 0.344 21.3 0.015 72.1 0.939 177.0 680 0.961 176.5 0.326 20.4 0.016 72.0 0.936 176.7 700 0.962 176.2 0.311 19.5 0.017 74.3 0.937 176.4 720 0.960 176.0 0.298 19.0 0.018 74.2 0.937 176.1 740 0.962 175.5 0.283 18.6 0.019 74.5 0.938 175.8 760 0.963 175.3 0.269 17.5 0.019 74.9 0.943 175.5 780 0.963 175.2 0.259 17.2 0.020 74.1 0.944 175.0 800 0.964 175.0 0.247 16.9 0.021 72.8 0.949 174.7 820 0.962 175.0 0.237 16.5 0.022 75.4 0.946 174.7 840 0.964 174.7 0.230 15.8 0.022 75.1 0.946 174.5 860 0.965 174.5 0.220 16.2 0.023 76.0 0.944 174.1 880 0.965 174.1 0.211 15.4 0.024 75.8 0.948 173.8 900 0.962 173.8 0.202 15.1 0.025 75.0 0.949 173.4 920 0.967 173.5 0.193 15.0 0.026 75.8 0.952 172.8 940 0.963 173.5 0.189 14.4 0.026 75.8 0.952 172.7 960 0.964 173.2 0.180 13.8 0.027 75.6 0.949 172.7 980 0.966 173.1 0.176 14.6 0.028 76.0 0.951 172.6 1000 0.964 173.0 0.170 14.0 0.029 76.5 0.952 172.2 s11 s21 s12 s22
silicon rf power semiconductors RD09MUP2 rohs compliance, silicon mosfet power transistor, 520mhz, 8w RD09MUP2 17 aug 2010 6/8 electrostatic sensitive device observe handling precautions RD09MUP2 s-parameter data (@vdd=7.2v, id=900ma) freq. [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 100 0.914 -176.9 4.363 78.5 0.012 0.2 0.825 -175.5 120 0.918 -177.4 3.638 74.9 0.012 -0.6 0.833 -176.2 140 0.920 -178.0 3.060 71.4 0.011 0.3 0.832 -177.1 160 0.922 -178.3 2.614 68.8 0.011 1.6 0.829 -177.3 180 0.921 -178.6 2.287 66.7 0.011 4.4 0.833 -177.4 200 0.921 -178.8 2.039 64.6 0.010 6.5 0.846 -177.2 220 0.922 -179.3 1.840 62.1 0.010 8.5 0.863 -177.4 240 0.925 -179.4 1.665 59.6 0.010 8.0 0.870 -177.5 260 0.924 -179.8 1.503 56.8 0.009 10.9 0.868 -177.9 280 0.928 180.0 1.364 54.7 0.009 13.1 0.864 -178.2 300 0.929 -180.0 1.240 52.9 0.009 18.6 0.860 -178.1 320 0.936 180.0 1.144 51.1 0.009 26.6 0.866 -178.4 340 0.935 179.8 1.064 49.4 0.009 27.8 0.879 -178.8 360 0.936 179.4 0.993 47.2 0.009 32.4 0.891 -179.0 380 0.937 179.0 0.923 45.2 0.009 34.4 0.896 -179.4 400 0.937 178.9 0.851 43.5 0.009 40.1 0.896 -179.7 420 0.939 178.5 0.795 41.7 0.009 47.0 0.895 -179.8 440 0.941 178.5 0.738 40.4 0.009 52.8 0.892 -180.0 460 0.944 178.3 0.696 39.3 0.010 50.3 0.898 179.6 480 0.946 178.1 0.654 38.0 0.011 56.9 0.908 179.3 500 0.948 178.0 0.619 36.5 0.011 59.5 0.912 178.8 520 0.950 177.9 0.585 34.8 0.012 62.7 0.914 178.4 540 0.949 177.5 0.549 33.5 0.012 63.1 0.915 178.1 560 0.948 177.1 0.518 32.2 0.014 63.6 0.916 178.0 580 0.950 177.0 0.491 31.1 0.014 65.6 0.918 177.8 600 0.952 176.6 0.467 30.3 0.014 66.3 0.919 177.6 620 0.954 176.5 0.444 29.5 0.015 67.6 0.924 177.0 640 0.958 176.5 0.426 28.5 0.016 69.8 0.930 176.4 660 0.954 176.4 0.400 27.2 0.017 69.8 0.932 176.3 680 0.957 176.3 0.382 26.3 0.017 70.8 0.929 176.0 700 0.956 176.0 0.367 25.6 0.018 71.9 0.929 175.9 720 0.955 175.5 0.350 24.9 0.019 72.4 0.931 175.8 740 0.956 175.2 0.334 23.9 0.019 72.5 0.930 175.3 760 0.959 174.9 0.319 23.4 0.020 73.0 0.934 174.8 780 0.958 175.0 0.308 22.3 0.021 72.7 0.939 174.5 800 0.959 174.8 0.293 22.0 0.021 74.0 0.944 174.3 820 0.962 174.8 0.281 21.5 0.022 73.9 0.939 174.1 840 0.962 174.5 0.271 21.0 0.023 74.2 0.938 174.0 860 0.961 174.3 0.261 20.4 0.023 74.1 0.939 173.9 880 0.960 174.0 0.252 20.0 0.025 73.9 0.940 173.4 900 0.961 173.6 0.244 19.5 0.025 74.6 0.942 173.0 920 0.961 173.3 0.233 18.9 0.026 74.4 0.944 172.5 940 0.960 173.3 0.225 18.5 0.027 74.7 0.945 172.3 960 0.962 173.1 0.219 18.2 0.027 74.7 0.945 172.3 980 0.962 172.9 0.211 17.5 0.029 74.3 0.948 172.4 1000 0.960 172.8 0.206 18.0 0.029 74.4 0.948 172.0 s11 s21 s12 s22
silicon rf power semiconductors RD09MUP2 rohs compliance, silicon mosfet power transistor, 520mhz, 8w RD09MUP2 17 aug 2010 7/8 electrostatic sensitive device observe handling precautions attention: 1.high temperature ; this product might have a heat generation while operation,please take notice tha t have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. at the near the product,do not place the combustible material that have possibilities to aris e the fire. 2.generation of high frequency power ; this product generate a high frequency power. please take notic e that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.before use; before use the product,please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. precautions for the use of mitsubishi silicon rf power devices: 1. the specifications of mention are not guarantee values in this data sheet. please confirm additional details regarding operation of these products from the formal specification sheet. for copies of the formal specification sheets, please contact one of our sales offices. 2. rd series products (rf power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. in particular, while these products ar e highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. examples of critical co mmunications elements would include transmitters fo r base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact t o society. 3. rd series products use mosfet semiconductor technology. they are sensitive to esd voltage therefor e appropriate esd precautions are required. 4. in the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the rf-swing exceed the breakdown voltage. 5. in order to maximize reliability of the equipment, it is better to keep the devices temperature low. it is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for rd series products lower than 120deg/c(in case o f tchmax=150deg/c) ,140deg/c(in case of tchmax=175deg/c) under standard conditions. 6. do not use the device at the exceeded the maximu m rating condition. in case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. these results causes in fire or injury. 7. for specific precautions regarding assembly of these products into the equipment, please refer to th e supplementary items in the specification sheet. 8. warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it?s original form. 9. for additional ?safety first? in your circuit design and notes regarding the materials, please refer the las t page of this data sheet. 10. please refer to the additional precautions in the formal specification sheet.
silicon rf power semiconductors RD09MUP2 rohs compliance, silicon mosfet power transistor, 520mhz, 8w RD09MUP2 17 aug 2010 8/8 electrostatic sensitive device observe handling precautions mitsubishi electric corporation puts the maximum effort in to making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with t hem. trouble with semiconductors ma y lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circ uits, (ii) use of non-flammable material or (iii) prevention agai nst any malfunction or mishap. keep safety first in your circuit designs ! - these materials are intended as a reference to assist our cu stomers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to mitsubishi electr ic corporation or a third party. - mitsubishi electric corporation assumes no responsibility for any damage, or infringem ent of any third-party?s rights, origin ating in the use of any product data, diagrams, charts, programs, al gorithms, or circuit applicati on examples contained in these materials. - all information contained in these mate rials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are s ubject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an aut horized mitsubishi semiconducto r product distributor for the latest product informatio n before purchasing a product listed herein. t he information described here may contain technical inaccuracies or typographical errors. mitsubishi electric co rporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay a ttention to information published by mitsubish i electric corporation by various means, including the mitsubishi semiconductor hom e page (http:// www.mits ubishichips.com). - when using any or all of the informati on contained in these materials, including pr oduct data, diagrams, charts, programs, an d algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. mitsubishi electr ic corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. - mitsubishi electric corporati on semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electr ic corporation or an authorize d mitsubishi semiconductor product distributor when considering the use of a product contained herei n for any specific purposes, such as apparatus or systems fo r transportation, vehicular, medical, aer ospace, nuclear, or undersea repeater use. - the prior written approval of mitsubishi el ectric corporation is necessary to reprin t or reproduce in whole or in part these materials. - if these products or technologi es are subject to the japanese export control restrictions, they must be exported under a lice nse from the japanese government and cannot be imported in to a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. - please contact mitsubishi elec tric corporation or an authorized mitsubishi se miconductor product distri butor for further deta ils on these materials or the products contained therein. notes regarding these materials
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